Effect of the mask on etching rate in a reactive ion etch mode 反应离子刻蚀中掩膜对刻蚀率的影响
A new method to enhance the dry etch-resistant of the main mask photoresist and the etch rate for etching Si as window is presented. Deep/ shallow trench technology has been realized on simple and crude dry-etch equipment. 提出采用离子注入方法提高主掩膜光刻胶的耐干法腐蚀和腐蚀窗口磋的腐蚀速率,实现了在比较简陋的干法腐蚀设备上采用反应离子腐蚀模式进行深/浅硅槽工艺。
From the hard mask experiment we know the variation of chamber wall condition is important reason for etch process spec shift. 本文通过硬掩模工艺的实验得知刻蚀腔环境的变化是导致刻蚀工艺偏移的一个重要原因。